B1569 查看數據表（PDF） - New Jersey Semiconductor
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B1569 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1567
ELECTRICAL CHARACTERISTICS
Tj=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -5mA; !B= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc= -50 u A; IE= 0
VcE(sat) Collector-Emitter Saturation Voltage lc=-1A;lB=-1mA
ICBO
Collector Cutoff Current
VCB=-100V;IE=0
IEBO
Emitter Cutoff Current
VEa= -7V; lc= 0
hFE
DC Current Gain
lc=-1A;VCE=-2V
COB
Collector Output Capacitance
lE=0;VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-100
V
-100
V
-1.5
V
-10
uA
-3.0
mA
1000
10000
35
PF
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