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AD5280 查看數據表(PDF) - Analog Devices

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AD5280 Datasheet PDF : 20 Pages
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AD5280/AD5282
OPERATION
The AD5280/AD5282 provides a single-/dual-channel, 256-
position, digitally controlled variable resistor (VR) device.
To program the VR settings, refer to the Digital Interface section.
Both parts have an internal power-on preset that places the wiper
at midscale during power-on, which simplifies the fault condition
recovery at power-up. Operation of the power-on preset function
also depends on the state of the VL pin. In addition, the shutdown
SHDN pin of the AD5280/AD5282 places the RDAC in an
almost zero power consumption state where terminal A is open
circuited and the wiper W is connected to terminal B, resulting
in only leakage currents being consumed in the VR structure.
During shutdown, the VR latch settings are maintained or new
settings can be programmed. When the part is returned from
shutdown, the corresponding VR setting will be applied to the
RDAC.
Ax
SHDN
RS
D7
D6
RS
D5
D4
D3
RS
D2
Wx
D1
D0
RDAC
LATCH
AND
DECODER RS
Bx
Figure 4. AD5280/AD5282 Equivalent RDAC Circuit
PROGRAMMING THE VARIABLE RESISTOR
Rheostat Operation
The nominal resistance of the RDAC between terminals A and
B is available in 20 k, 50 k, and 200 k. The final two or
three digits of the part number determine the nominal resistance
value, e.g., 20 k= 20; 50 k= 50; 200 k= 200. The nominal
resistance (RAB) of the VR has 256 contact points accessed by
the wiper terminal, plus the B terminal contact. The 8-bit data
in the RDAC latch is decoded to select one of the 256 possible
settings. Assuming a 20 kpart is used, the wiper’s first con-
nection starts at the B terminal for data 00H. Since there is a 60
wiper contact resistance, such a connection yields a minimum
of 60 resistance between terminals W and B. The second
connection is the first tap point that corresponds to 138
(RWB = RAB/256 + RW = 78 + 60 ) for data 01H. The third
connection is the next tap point representing 216 (78 ϫ 2 + 60)
for data 02H, and so on. Each LSB data value increase moves
the wiper up the resistor ladder until the last tap point is reached
at 19982 [RAB – 1 LSB + RW]. Figure 4 shows a simplified
diagram of the equivalent RDAC circuit where the last resistor
string will not be accessed; therefore, there is 1 LSB less of the
nominal resistance at full scale in addition to the wiper resistance.
The general equation determining the digitally programmed
output resistance between W and B is:
( ) RWB
D
=
D
256
× RAB
+
RW
(1)
where:
D is the decimal equivalent of the binary code loaded in the
8-bit RDAC Register.
RAB is the nominal end-to-end resistance.
RW is the wiper resistance contributed by the on resistance of
the internal switch.
Again, if RAB = 20 kand the A terminal is open circuited, the
following output resistance values, RWB, will be set for the fol-
lowing RDAC latch codes.
Table I. Codes and Corresponding Resistances
D (DEC)
255
128
1
0
RWB ()
19982
10060
138
60
Output State
Full Scale (RAB – 1 LSB + RW)
Midscale
1 LSB
Zero-Scale (Wiper Contact Resistance)
Note that in the zero-scale condition, a finite wiper resistance of 60 is
present. Care should be taken to limit the current flow between W and B in this
state to a maximum pulse current of no more than 20 mA. Otherwise, degrada-
tion or possible destruction of the internal switch contact can occur.
Similar to the mechanical potentiometer, the resistance of the
RDAC between the wiper W and terminal A also produces a
digitally controlled complementary resistance, RWA. When these
terminals are used, the B terminal can be opened. Setting the
resistance value for RWA starts at a maximum value of resistance
and decreases as the data loaded in the latch increases in value.
The general equation for this operation is:
( ) RWA
D
=
256 – D
256
× RAB
+ RW
(2)
For RAB = 20 kand B terminal open circuited, the following
output resistance, RWA, will be set for the following RDAC
latch codes.
Table II. Codes and Corresponding Resistances
D (DEC)
RWA ()
Output State
255
138
Full Scale
128
10060
Midscale
1
19982
1 LSB
0
20060
Zero Scale
The typical distribution of the nominal resistance, RAB, from
channel-to-channel matches within ± 1%. Device-to-device
matching is process lot dependent and is possible to have ± 30%
variation. Since the resistance element is processed in thin film
technology, the change in RAB with temperature has a very low
30 ppm/°C temperature coefficient.
REV. 0
–11–

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