BAS70-06-V-GS08(2006) 查看數據表（PDF） - Vishay Semiconductors
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BAS70-06-V-GS08 Datasheet PDF : 5 Pages
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BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 10 μA (pulsed)
Leakage current
VR = 50 V
Forward voltage
IF = 1.0 mA
Forward voltage1)
IF = 15 mA,
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA,
RL = 100 Ω
1) Pulse test; tp ≤ 300 μs
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Symbol
Min
V(BR)
70
IR
VF
VF
CD
trr
Typ.
Max
Unit
V
20
100
nA
410
mV
1000
mV
1.5
2
pF
5
ns
7.5 (0.3)
3 (0.12)
12 (0.47)
15 (0.59)
0.8 (0.03)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
www.vishay.com
2
Document Number 85702
Rev. 1.7, 27-Sep-06
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