DD28F032SA 查看數據表（PDF） - Intel
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DD28F032SA Datasheet PDF : 49 Pages
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DD28F032SA
E
6.11 Erase and Word/Byte Write Performance, Cycling Performance
and Suspend Latency(3)
VCC = 3.3V ± 0.3V, VPP = 12.0V ± 0.6V, TA = 0°C to +70°C
Sym
Parameter
Notes Min
Typ(1)
Max Units Test Conditions
Page Buffer Byte Write Time 2,4
3.26 Note 6 µs
tWHRH1
tWHRH2
tWHRH3
Page Buffer Word Write Time 2,4
Word/Byte Program Time 2
Block Program Time
2
Block Program Time
2
Block Erase Time
2
Full Chip Erase Time
2
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
Erase Cycles
5
6.53
9
0.6
0.3
0.8
51.2
7.0
Note 6 µs
Note 6 µs
2.1 sec
1.0 sec
10 sec
sec
µs
Byte Program
Word Program
10.0
µs
100,000 1,000,000
Cycles
VCC = 5.0V ± 0.5V, VPP = 12.0V ± 0.6V, TA = 0°C to +70°C
Sym
Parameter
Notes Min
Typ(1)
Max Units Test Conditions
Page Buffer Byte Write Time 2,4
2.76 Note 6 µs
Page Buffer Word Write Time 2,4
tWHRH1 Word/Byte Program Time
2
tWHRH2 Block Program Time
2
tWHRH3 Block Program Time
2
5.51 Note 6 µs
6
Note 6 µs
0.4
2.1 sec Byte Program
0.2
1.0 sec Word Program
Block Erase Time
2
0.6
10 sec
Full Chip Erase Time
2
38.4
sec
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
5.0
µs
8.0
µs
Erase Cycles
5 100,000 1,000,000
Cycles
NOTES:
1. +25°C, VCC = 3.3V or 5.0V nominal, VPP = 12.0V nominal, 10K cycles.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. This assumes using the full Page Buffer to program to the flash memory (256 bytes or 128words).
5. 1,000,000 cycle performance assumes the application uses block retirement techniques.
6. This information will be available in a technical paper. Please call Intel’s Application hotline or your local Intel sales office for
more information.
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