DSPIC30F9013BT-30I/ML-ES 查看數據表（PDF） - Microchip Technology

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DSPIC30F9013BT-30I/ML-ES

High-Performance, 16-Bit Digital Signal Controllers

Microchip Technology 

dsPIC30F3014/4013

TABLE 23-11: ELECTRICAL CHARACTERISTICS: BOR

DC CHARACTERISTICS

Standard Operating Conditions: 2.5V to 5.5V

(unless otherwise stated)

Operating temperature -40°C ≤ TA ≤ +85°C for Industrial

-40°C ≤ TA ≤ +125°C for Extended

Param

No.

Symbol

Characteristic

Min Typ(1) Max Units

Conditions

BO10

VBOR

BOR Voltage(2) on

VDD transition high-

to-low

BORV = 11(3) —

BORV = 10 2.6

—

—

V Not in operating

range

— 2.71 V

BORV = 01 4.1 — 4.4 V

BORV = 00 4.58 — 4.73 V

BO15

VBHYS

—

5

— mV

Note 1:

2:

3:

Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and

are not tested.

These parameters are characterized but not tested in manufacturing.

11 values not in usable operating range.

TABLE 23-12: DC CHARACTERISTICS: PROGRAM AND EEPROM

DC CHARACTERISTICS

Standard Operating Conditions: 2.5V to 5.5V

(unless otherwise stated)

Operating temperature -40°C ≤ TA ≤ +85°C for Industrial

-40°C ≤ TA ≤ +125°C for Extended

Param

No.

Symbol

Characteristic

Min Typ(1) Max Units

Conditions

Data EEPROM Memory(2)

D120 ED

Byte Endurance

100K 1M

— E/W -40°C ≤ TA ≤ +85°C

D121 VDRW VDD for Read/Write

VMIN —

5.5

V Using EECON to read/write

VMIN = Minimum operating

voltage

D122 TDEW Erase/Write Cycle Time

—

2

— ms

D123 TRETD Characteristic Retention

40 100

— Year Provided no other specifications

are violated

D124 IDEW IDD During Programming

—

10

30 mA Row Erase

Program Flash Memory(2)

D130 EP

Cell Endurance

10K 100K — E/W -40°C ≤ TA ≤ +85°C

D131 VPR

VDD for Read

VMIN —

5.5

V VMIN = Minimum operating

voltage

D132 VEB

VDD for Bulk Erase

4.5 —

5.5

V

D133 VPEW VDD for Erase/Write

3.0 —

5.5

V

D134 TPEW Erase/Write Cycle Time

—

2

— ms

D135 TRETD Characteristic Retention

40 100

— Year Provided no other specifications

are violated

D136 TEB

ICSP™ Block Erase Time

—

4

— ms

D137 IPEW IDD During Programming

—

10

30 mA Row Erase

D138 IEB

IDD During Programming

—

10

30 mA Bulk Erase

Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated.

2: These parameters are characterized but not tested in manufacturing.

© 2007 Microchip Technology Inc.

DS70138E-page 173

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