E28F640J3C-150 查看數據表（PDF） - Intel

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E28F640J3C-150

Intel StrataFlash® Memory (J3)

Intel 

256-Mbit J3 (x8/x16)

Table 7. DC Voltage Characteristics

Symbol

Parameter

Min Max Unit

Test Conditions

VPENH

VPEN during Block Erase,

Program, or Lock-Bit Operations

2.7

3.6

V

VLKO

VCC Lockout Voltage

2.0

V

NOTES:

1. Includes STS.

2. Sampled, not 100% tested.

3. Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK,

and not guaranteed in the range between VPENLK (max) and VPENH (min), and above VPENH

(max).

4. Typically, VPEN is connected to VCC (2.7 V–3.6 V).

5. Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO, and

not guaranteed in the range between VLKO (min) and VCC (min), and above VCC (max).

6. Includes all operational modes of the device including standby and power-up sequences.

7. VCC operating condition for standby has to meet typical operationg coditons.

Notes

3,4

5

Datasheet

21

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