FDMS7672AS 查看數據表（PDF） - Fairchild Semiconductor
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FDMS7672AS Datasheet PDF : 8 Pages
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
30
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
V
18
mV/°C
500
µA
100
nA
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 1 mA
1.2
1.9
3.0
V
ID = 10 mA, referenced to 25 °C
-5
mV/°C
VGS = 10 V, ID = 18 A
VGS = 7 V, ID = 16 A
VGS = 4.5 V, ID = 14 A
VGS = 10 V, ID = 18 A, TJ = 125 °C
VDS = 5 V, ID = 18 A
3.2
4.0
3.5
4.5
mΩ
4.3
5.2
4.1
5.2
97
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2120 2820 pF
735
975
pF
90
135
pF
1.1
2.2
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 18 A
12
21
ns
5
10
ns
28
44
ns
4
10
ns
33
46
nC
15
22
nC
6.5
nC
4.0
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 18 A
(Note 2)
(Note 2)
0.48
0.9
V
0.80
1.3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 18 A, di/dt = 300 A/µs
26
42
ns
26
42
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7672AS Rev.C
2
www.fairchildsemi.com
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