DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F101C4U6AXXX 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STM32F101C4U6AXXX Datasheet PDF : 79 Pages
First Prev 41 42 43 44 45 46 47 48 49 50 Next Last
Electrical characteristics
STM32F101x4, STM32F101x6
Figure 21. Typical application with a 32.768 kHz crystal
5.3.7
Resonator with
integrated capacitors
CL1
OSC32_IN
32.768 KH z
resonator
RF
OSC32_OU T
CL2
Bias
controlled
gain
fLSE
STM32F10xxx
ai14129b
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
Table 23. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI
Frequency
DuCy(HSI) Duty cycle
8
MHz
45
55 %
User-trimmed with the RCC_CR
register(2)
1(3)
%
ACCHSI
tsu(HSI)(4)
Accuracy of the HSI
oscillator
Factory-
calibrated(4)
HSI oscillator
startup time
TA = –40 to 105 °C
TA = –10 to 85 °C
TA = 0 to 70 °C
TA = 25 °C
–2
–1.5
–1.3
–1.1
1
2.5 %
2.2 %
2
%
1.8 %
2 µs
IDD(HSI)(4)
HSI oscillator power
consumption
80 100 µA
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
46/79
Doc ID 15058 Rev 5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]