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STM32F101R6T6TR 查看數據表(PDF) - STMicroelectronics

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STM32F101R6T6TR Datasheet PDF : 79 Pages
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Electrical characteristics
STM32F101x4, STM32F101x6
Table 45.
Symbol
ADC accuracy(1) (2) (3)
Parameter
Test conditions
Typ Max(4) Unit
ET Total unadjusted error
EO Offset error
EG Gain error
ED Differential linearity error
EL Integral linearity error
fPCLK2 = 28 MHz,
fADC = 14 MHz, RAIN < 10 kΩ,
VDDA = 2.4 V to 3.6 V
Measurements made after
ADC calibration
±2
±1.5
±1.5
±1
±1.5
±5
±2.5
±3
LSB
±2
±3
1. ADC DC accuracy values are measured after internal calibration.
2. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
3. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-
robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
4. Based on characterization, not tested in production.
Figure 32. ADC accuracy characteristics
[1LSBIDEAL
=
VDDA
4096
4095
4094
4093
7
6
5
EO
4
3
2
1
(2)
ET
(3)
EL
ED
1 LSBIDEAL
EG
(1)
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total u nadjusted er ror: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset e rror: deviation between the first actual
transition and the first ideal one.
EG=Gain er ror: deviation between the last ideal
transition and the last actual one.
ED=Differential linearity error: maximum deviation
between actual steps and the ideal one.
EL=Integral linearity error: maximum deviation
between any actual transition and the end point
correlation line.
0
1234567
VSSA
4093 4094 4095 4096
VDDA
ai15497
66/79
Doc ID 15058 Rev 5

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