M29F080D90N6 查看數據表（PDF） - STMicroelectronics
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M29F080D90N6 Datasheet PDF : 37 Pages
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M29F080D
Table 18. CFI Query System Interface Information
Address
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
45h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
55h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
1Dh
00h
VPP [Programming] Supply Minimum Program/Erase voltage
00h not supported
1Eh
00h
VPP [Programming] Supply Maximum Program/Erase voltage
00h not supported
1Fh
04h
Typical timeout per single byte program = 2n µs
20h
00h
Typical timeout for minimum size write buffer program = 2n µs
21h
0Ah
Typical timeout per individual block erase = 2n ms
22h
00h
Typical timeout for full chip erase = 2n ms
23h
04h
Maximum timeout for byte program = 2n times typical
24h
00h
Maximum timeout for write buffer program = 2n times typical
25h
03h
Maximum timeout per individual block erase = 2n times typical
26h
00h
Maximum timeout for chip erase = 2n times typical
Note: 1. Not supported in the CFI
Value
4.5V
5.5V
NA
NA
16µs
NA
1s
see note (1)
256µs
NA
8s
see note (1)
28/37
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