M29F800DT55N6F(2003) 查看數據表（PDF） - STMicroelectronics

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M29F800DT55N6F
(Rev.:2003)

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

STMicroelectronics 

M29F800DT, M29F800DB

Table 23. CFI Query System Interface Information

Address

x16

x8

Data

Description

VCC Logic Supply Minimum Program/Erase voltage

1Bh

36h

0045h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

VCC Logic Supply Maximum Program/Erase voltage

1Ch

38h

0055h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

1Dh

3Ah

0000h VPP [Programming] Supply Minimum Program/Erase voltage

1Eh

3Ch

0000h VPP [Programming] Supply Maximum Program/Erase voltage

1Fh

3Eh

0004h Typical timeout per single byte/word program = 2n µs

20h

40h

0000h Typical timeout for minimum size write buffer program = 2n µs

21h

42h

000Ah Typical timeout per individual block erase = 2n ms

22h

44h

0000h Typical timeout for full chip erase = 2n ms

23h

46h

0004h Maximum timeout for byte/word program = 2n times typical

24h

48h

0000h Maximum timeout for write buffer program = 2n times typical

25h

4Ah

0003h Maximum timeout per individual block erase = 2n times typical

26h

4Ch

0000h Maximum timeout for chip erase = 2n times typical

Note: 1. Not supported in the CFI

Value

4.5V

5.5V

NA

NA

16µs

NA

1s

see note (1)

256µs

NA

8s

see note (1)

30/39

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