M29W128GL60N6E 查看數據表（PDF） - Numonyx -> Micron

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M29W128GL60N6E

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

M29W128GH, M29W128GL

Command interface

6.1.10

Program command

The Program command can be used to program a value to one address in the memory array

at a time. The command requires four Bus Write operations, the final write operation latches

the address and data in the internal state machine and starts the Program/Erase controller.

Programming can be suspended and then resumed by issuing a Program Suspend

command and a Program Resume command, respectively (see Section 6.1.8: Program

Suspend command and Section 6.1.9: Program Resume command).

If the address falls in a protected block then the Program command is ignored, the data

remains unchanged. The Status Register is never read and no error condition is given.

After programming has started, Bus Read operations output the Status Register content.

See Figure 16: Write Enable Controlled Program waveforms (8-bit mode) and Figure 17:

Write Enable Controlled Program waveforms (16-bit mode) for more details. Typical program

times are given in Table 17: Program, Erase times and Program, Erase endurance cycles.

After the program operation has completed the memory will return to the Read mode, unless

an error has occurred. When an error occurs, Bus Read operations to the memory continue

to output the Status Register. A Read/Reset command must be issued to reset the error

condition and return to Read mode.

One of the Erase commands must be used to set all the bits in a block or in the whole

memory from ’0’ to ’1’.

The Program operation is aborted by performing a reset or powering-down the device. In

this case data integrity cannot be ensured, and it is recommended to reprogram the word or

byte aborted.

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