M29W128GL60N6E 查看數據表（PDF） - Numonyx -> Micron

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M29W128GL60N6E

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

DC and AC parameters

M29W128GH, M29W128GL

Table 24. Device capacitance(1)

Symbol

Parameter

Test condition

Min

Max

Unit

CIN

Input capacitance

COUT

Output capacitance

1. Sampled only, not 100% tested.

VIN = 0 V

VOUT = 0 V

6

pF

12

pF

Table 25. DC characteristics

Symbol

Parameter

ILI(1) Input leakage current

ILO Output leakage current

ICC1 Read current

Random Read

Page Read

Test condition

0 V ≤VIN ≤VCC

0 V ≤VOUT ≤VCC

E = VIL, G = VIH,

f = 6 MHz

E = VIL, G = VIH,

f = 10 MHz

Min Typ Max Unit

±1

µA

±1

µA

10 mA

15 mA

ICC2 Supply current (Standby)

ICC3(2) Supply current (Program/Erase)

IPP1

IPP2

Program

current

(Program)

IPP3

Read or

Standby

Reset

Program

operation

ongoing

E = VCCQ ± 0.2 V,

RP = VCCQ ± 0.2 V

Program/Erase

controller active

VPP/WP =

VIL or VIH

VPP/WP = VPPH

VPP/WP ≤VCC

RP = VSS ± 0.2 V

VPP/WP = 12 V ± 5%

VPP/WP = VCC

100 µA

20 mA

20 mA

1

5

µA

1

5

µA

1

10 mA

1

5

µA

IPP4

Program

current (Erase)

Erase

operation

ongoing

VIL Input Low voltage

VIH Input High voltage

VOL Output Low voltage

VOH Output High voltage

VID

VPPH

Identification voltage

Voltage for VPP/WP Program

acceleration

VPP/WP = 12 V ± 5%

VPP/WP = VCC

VCC ≥ 2.7 V

VCC ≥ 2.7 V

IOL = 100 µA, VCC = VCC(min),

VCCQ = VCCQ(min)

IOH = 100 µA, VCC = VCC(min),

VCCQ = VCCQ(min)

−0.5

0.7VCCQ

3

10 mA

1

5

µA

0.3VCCQ V

VCCQ+0.4 V

0.15VCCQ V

0.85VCCQ

11.5

11.4

V

12.5

V

12.6

V

VLKO(2)

Program/Erase lockout supply

voltage

2.3

2.5

V

1. The maximum input leakage current is ±5 µA on the VPP/WP pin.

2. Sampled only, not 100% tested.

62/94

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