M45PE80-VMN6G 查看數據表（PDF） - Numonyx -> Micron

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M45PE80-VMN6G

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

Numonyx -> Micron 

Power-up and Power-down

M45PE80

Figure 18. Power-up timing

VCC

VCC(max)

Program, Erase and Write Commands are Rejected by the Device

Chip Selection Not Allowed

VCC(min)

Reset State

of the

Device

VWI

tVSL

Read Access allowed

Device fully

accessible

tPUW

time

AI04009C

Table 6. Power-Up timing and VWI threshold

Symbol

Parameter

Min.

tVSL(1) VCC(min) to S low

30

tPUW(1) Time delay before the first Write, Program or Erase instruction

1

VWI(1) Write inhibit voltage

1.5

1. These parameters are characterized only, over the temperature range –40°C to +85°C.

Max. Unit

µs

10 ms

2.5

V

32/47

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