M58WR064F-ZBE 查看數據表（PDF） - STMicroelectronics

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M58WR064F-ZBE

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR064FT, M58WR064FB

Figure 23. Double Word Program Flowchart and Pseudo code

Start

Write 35h

Write Address 1

& Data 1 (3, 4)

Write Address 2

& Data 2 (3)

Read Status

Register (4)

double_word_program_command (addressToProgram1, dataToProgram1,

addressToProgram2, dataToProgram2)

{

writeToFlash (addressToProgram1, 0x35);

/*see note (4)*/

writeToFlash (addressToProgram1, dataToProgram1) ;

/*see note (3) */

writeToFlash (addressToProgram2, dataToProgram2) ;

/*see note (3) */

/*Memory enters read status state after

the Program command*/

do {

status_register=readFlash (addressToProgram) ;

"see note (4)"

/* E or G must be toggled*/

NO

SR7 = 1

YES

} while (status_register.SR7== 0) ;

NO

SR3 = 0

YES

VPP Invalid

Error (1, 2)

if (status_register.SR3==1) /*VPP invalid error */

error_handler ( ) ;

NO

SR4 = 0

Program

Error (1, 2)

if (status_register.SR4==1) /*program error */

error_handler ( ) ;

YES

NO

SR1 = 0

YES

End

Program to Protected

Block Error (1, 2)

if (status_register.SR1==1) /*program to protect block error */

error_handler ( ) ;

}

AI06171b

Note: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or

after a sequence.

2. If an error is found, the Status Register must be cleared before further Program/Erase operations.

3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.

4. Any address within the bank can equally be used.

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