DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M95080-RMN6TP 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
M95080-RMN6TP Datasheet PDF : 40 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
M95160, M95080
Table 22. AC Characteristics (M95xxx-W, Device Grade 3)
Test conditions specified in Table 12. and Table 10.
Symbol Alt.
Parameter
Min.4 Max.4
fC
fSCK Clock Frequency
D.C.
2
tSLCH
tCSS1 S Active Setup Time
200
tSHCH
tCSS2 S Not Active Setup Time
200
tSHSL
tCS S Deselect Time
200
tCHSH
tCSH S Active Hold Time
200
tCHSL
S Not Active Hold Time
200
tCH 1
tCLH Clock High Time
200
tCL 1
tCLL Clock Low Time
200
tCLCH 2
tRC Clock Rise Time
1
tCHCL 2
tFC Clock Fall Time
1
tDVCH
tDSU Data In Setup Time
40
tCHDX
tDH Data In Hold Time
50
tHHCH
Clock Low Hold Time after HOLD not Active
140
tHLCH
Clock Low Hold Time after HOLD Active
90
tCLHL
Clock Low Set-up Time before HOLD Active
0
tCLHH
Clock Low Set-up Time before HOLD not
Active
0
tSHQZ 2
tDIS Output Disable Time
250
tCLQV
tV
Clock Low to Output Valid
150
tCLQX
tHO Output Hold Time
0
tQLQH 2
tRO Output Rise Time
100
tQHQL 2
tFO Output Fall Time
100
tHHQV
tLZ HOLD High to Output Valid
100
tHLQZ 2
tHZ HOLD Low to Output High-Z
250
tW
tWC Write Time
10
Note: 1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
3. To be characterized.
4. Previous product: identified by Process Identification letter L.
5. Present product: identified by Process Identification letter W or G.
Min.5
D.C.
90
90
100
90
90
90
90
20
30
70
40
0
0
0
Max.5
5
1
1
100
60
50
50
50
100
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
29/40

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]