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M95160-DFDW6TP 查看數據表(PDF) - STMicroelectronics

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产品描述 (功能)
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M95160-DFDW6TP
STMICROELECTRONICS
STMicroelectronics 
M95160-DFDW6TP Datasheet PDF : 47 Pages
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M95160 M95160-W M95160-R M95160-DF
Instructions
Note:
S
C
The self-timed write cycle tW is internally executed as a sequence of two consecutive
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit
is read as “0” and a programmed bit is read as “1”.
Figure 14. Page Write (WRITE) sequence
0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31
Instruction
16-Bit Address
Data Byte 1
D
15 14 13 3 2 1 0 7 6 5 4 3 2 1 0
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Data Byte 2
Data Byte 3
Data Byte N
D
7654321076543210
6543210
1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don’t Care.
AI01796D
DocID022580 Rev 4
25/47
46

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