M95160-DRDW6TG 查看數據表（PDF） - STMicroelectronics

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M95160-DRDW6TG

16-Kbit serial SPI bus EEPROM with high-speed clock

STMicroelectronics 

M95160 M95160-W M95160-R M95160-DF

DC and AC parameters

Table 11. AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

CL

Load capacitance

Input rise and fall times

Input pulse voltages

Input and output timing reference voltages

30

pF

-

50

ns

0.2 VCC to 0.8 VCC

V

0.3 VCC to 0.7 VCC

V

Figure 19. AC measurement I/O waveform

Input voltage levels

0.8 VCC

0.2 VCC

Input and output

timing reference levels

0.7 VCC

0.3 VCC

AI00825C

Table 12. Cycling performance

Symbol

Parameter(1)

Test conditions

Min. Max.

Unit

Ncycle

Write cycle endurance

TA ≤ 25 °C,

VCC(min) < VCC < VCC(max)

TA = 85 °C,

VCC(min) < VCC < VCC(max)

1. Cycling performance for products identified by process letter K.

- 4,000,000

Write cycle

- 1,200,000

Table 13. Memory cell data retention

Parameter

Test conditions

Min.

Unit

Data retention(1)

TA = 55 °C

200

Year

1. For products identified by process letter K. The data retention behavior is checked in production, while the

200-year limit is defined from characterization and qualification results.

Symbol

Table 14. Capacitance

Parameter

Test conditions(1) Min.

COUT Output capacitance (Q)

VOUT = 0 V

-

Input capacitance (D)

CIN

Input capacitance (other pins)

VIN = 0 V

VIN = 0 V

-

-

1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.

Max.

8

8

6

Unit

pF

pF

pF

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