NAND512W3A2CV6F 查看數據表（PDF） - STMicroelectronics
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NAND512W3A2CV6F
STMicroelectronics
NAND512W3A2CV6F Datasheet PDF : 57 Pages
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 20. AC Characteristics for Command, Address, Data Input
Symbol
Alt.
Symbol
Parameter
1.8V
Devices
3V
Devices
Unit
tALLWL
Address Latch Low to Write Enable Low
tALS
AL Setup time Min
0
tALHWL
Address Latch High to Write Enable Low
0
ns
tCLHWL
Command Latch High to Write Enable Low
tCLS
CL Setup time Min
0
tCLLWL
Command Latch Low to Write Enable Low
0
ns
tDVWH
tDS Data Valid to Write Enable High
Data Setup time Min 20
20
ns
tELWL
tCS Chip Enable Low to Write Enable Low
E Setup time
Min
0
0
ns
tWHALH
tWHALL
Write Enable High to Address Latch High
tALH
AL Hold time
Write Enable High to Address Latch Low
Min 10
10
ns
tWHCLH
tWHCLL
Write Enable High to Command Latch High
tCLH
CL hold time
Write Enable High to Command Latch Low
Min 10
10
ns
tWHDX
tDH Write Enable High to Data Transition
Data Hold time Min 10
10
ns
tWHEH
tCH Write Enable High to Chip Enable High
E Hold time
Min 10
10
ns
tWHWL tWH Write Enable High to Write Enable Low
W High Hold
time
Min 20
15
ns
tWLWH tWP Write Enable Low to Write Enable High
W Pulse Width Min
40
25(1)
ns
tWLWL
tWC Write Enable Low to Write Enable Low
Write Cycle time Min 60
Note: 1. If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns.
50
ns
37/57
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