JS48F4400PCZ00 查看數據表（PDF） - Numonyx -> Micron
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JS48F4400PCZ00 Datasheet PDF : 102 Pages
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Numonyx™ Wireless Flash Memory (W18)
6.0
6.1
Note:
Electrical Specifications
DC Current Characteristics
Specifications are for 130 nm and 90 nm devices unless otherwise stated; the 128 Mbit
density is supported ONLY on 90 nm.
Table 11: DC Current Characteristics (Sheet 1 of 2)
Symbol
Parameter (1)
VCCQ= 1.8 V
32/64-Mbit 128-Mbit
Unit
Test Condition
Note
ILI
Input Load
Output
ILO
Leakage
D[15:0]
130 nm
ICCS
90 nm
ICCS
130 nm
ICCAPS
90 nm
ICCAPS
VCC Standby
APS
Asynchronous
Page Mode
f=13 MHz
ICCR
Average
VCC Read
Synchronous CLK
= 40 MHz
Synchronous CLK
= 54 MHz
ICCR
Average
VCC Read
Synchronous CLK
= 66 MHz
ICCW
VCC Program
ICCE
VCC Block Erase
Typ Max Typ Max
VCC = VCCMax
—
±1
—
±1
µA VCCQ = VCCQMax
8
VIN = VCCQ or GND
VCC = VCCMax
—
±1
—
±1
µA VCCQ = VCCQMax
VIN = VCCQ or GND
8
50
8
70
VCC = VCCMax
µA VCCQ = VCCQMax
9
CE# = VCC
22
50
—
—
RST# =VCCQ
8
50
8
70
VCC = VCCMax
VCCQ = VCCQMax
µA CE# = VSSQ
10
22
50
—
—
RST# =VCCQ
All other inputs =VCCQ or VSSQ
3
6
4
7
mA 4 Word Read
3
6
13
6
13 mA Burst length = 4
8
14
8
14 mA Burst length = 8
3
10
18
11
19 mA Burst length =16
11
20
11
20 mA Burst length = Continuous
7
16
7
16 mA Burst length = 4
10
18
10
18 mA Burst length = 8
3
12
22
12
22 mA Burst length = 16
13
25
13
25 mA Burst length = Continuous
8
17
—
—
mA Burst length = 4
11
20
—
14
25
—
—
mA Burst length = 8
—
mA Burst length = 16
3, 4
16
30
—
—
mA Burst length = Continuous
18
40
18
40 mA VPP = VPP1, Program in Progress
4,5,6
8
15
8
15 mA VPP = VPP2, Program in Progress
18
40
18
40
mA VPP = VPP1, Block Erase in
Progress
8
15
8
15
mA VPP = VPP2, Block Erase in
Progress
4,5,6
November 2007
Order Number: 290701-18
Datasheet
23
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