JS48F4400PCZ00 查看數據表（PDF） - Numonyx -> Micron
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JS48F4400PCZ00 Datasheet PDF : 102 Pages
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Numonyx™ Wireless Flash Memory (W18)
Figure 30: Block Erase Flowchart
Start
Write 20h
Block Address
Write D0h and
Block Address
Read Status
Register
SR[7] =
0
1
Full Erase
Status Check
(if desired)
No
Suspend
Erase
BLOCK ERASE PROCEDURE
Bus
Command
Operation
Comments
Write
Block
Erase
Setup
Data = 20h
Addr = Block to be erased (BA)
Write
Erase Data = D0h
Confirm Addr = Block to be erased (BA)
Suspend
Erase
Loop
Yes
Read
Standby
Read SRD
Toggle CE# or OE# to update SRD
Check SR[7]
1 = WSM ready
0 = WSM busy
Repeat for subsequent block erasures.
Full status register check can be done after each block erase
or after a sequence of block erasures.
Block Erase
Complete
Read Status
Register
SR[3] =
1
0
SR[5:4] = 1
0
SR[5] =
1
0
1
SR[1] =
0
Block Erase
Successful
FULL ERASE STATUS CHECK PROCEDURE
VPP Range
Error
Command
Sequence Error
Block Erase
Error
Erase of
Locked Block
Aborted
Bus
Command
Operation
Comments
Standby
Check SR[3]
1 = VPP error
Standby
Check SR[5:4]
Both 1 = Command sequence error
Standby
Check SR[5]
1 = Block erase error
Standby
Check SR[1]
1 = Attempted erase of locked block
Erase aborted
SR[3,1] must be cleared before the WSM will allow further
erase attempts.
Only the Clear Status Register command clears SR[5:3,1].
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
12.3
Read-While-Write and Read-While-Erase
The Numonyx™ Wireless Flash Memory (W18) supports flexible multi-partition dual-
operation architecture. By dividing the flash memory into many separate partitions, the
device can read from one partition while programing or erasing in another partition;
hence the terms, RWW and RWE. Both of these features greatly enhance data storage
performance.
November 2007
Order Number: 290701-18
Datasheet
69
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