PIC16CR56A-RC/SO 查看數據表（PDF） - Microchip Technology

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PIC16CR56A-RC/SO

EPROM/ROM-Based 8-bit CMOS Microcontroller Series

Microchip Technology 

PIC16C5X

12.3 DC Characteristics: PIC16C54/55/56/57-RCE, XTE, 10E, HSE, LPE (Extended)

PIC16C54/55/56/57-RCE, XTE, 10E, HSE, LPE

(Extended)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C  TA  +125°C for extended

Param

No.

Symbol

Characteristic/Device

Min Typ† Max Units

Conditions

D001

VDD Supply Voltage

PIC16C5X-RCE

PIC16C5X-XTE

3.25 —

3.25 —

6.0

V

6.0

V

PIC16C5X-10E

4.5

—

5.5

V

PIC16C5X-HSE

PIC16C5X-LPE

4.5

—

5.5

V

2.5

—

6.0

V

D002 VDR RAM Data Retention Voltage(1) —

1.5*

—

V Device in SLEEP mode

D003

VPOR VDD Start Voltage to ensure

Power-on Reset

—

VSS

—

V See Section 5.1 for details on

Power-on Reset

D004

D010

SVDD

IDD

VDD Rise Rate to ensure

Power-on Reset

Supply Current(2)

PIC16C5X-RCE(3)

PIC16C5X-XTE

PIC16C5X-10E

PIC16C5X-HSE

PIC16C5X-HSE

PIC16C5X-LPE

D020

IPD Power-down Current(2)

0.05* —

—

1.8

—

1.8

—

4.8

—

4.8

—

9.0

—

19

—

5.0

—

0.8

— V/ms See Section 5.1 for details on

Power-on Reset

3.3 mA FOSC = 4 MHz, VDD = 5.5V

3.3 mA FOSC = 4 MHz, VDD = 5.5V

10 mA FOSC = 10 MHz, VDD = 5.5V

10 mA FOSC = 10 MHz, VDD = 5.5V

20 mA FOSC = 16 MHz, VDD = 5.5V

55

A FOSC = 32 kHz, VDD = 3.25V,

WDT disabled

22

A VDD = 3.25V, WDT enabled

18

A VDD = 3.25V, WDT disabled

* These parameters are characterized but not tested.

† Data in “Typ” column is based on characterization results at 25C.This data is for design guidance only and is

not tested.

Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus

loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on

the current consumption.

a) The test conditions for all IDD measurements in active Operation mode are: OSC1 = external square

wave, from rail-to-rail; all I/O pins tristated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT

enabled/disabled as specified.

b) For standby current measurements, the conditions are the same, except that the device is in SLEEP

mode. The power-down current in SLEEP mode does not depend on the oscillator type.

3: Does not include current through REXT. The current through the resistor can be estimated by the formula:

IR = VDD/2REXT (mA) with REXT in k.

DS30453E-page 70

Preliminary

 1997-2013 Microchip Technology Inc.

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