PIC16LC8X 查看數據表（PDF） - Microchip Technology
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PIC16LC8X Datasheet PDF : 117 Pages
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PIC16C8X
Applicable Devices 83 R83 84 84A R84
11.0 ELECTRICAL CHARACTERISTICS FOR PIC16C84
Absolute Maximum Ratings †
Ambient temperature under bias.............................................................................................................-55°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on VDD with respect to VSS ............................................................................................................... 0 to +7.5V
Voltage on MCLR with respect to VSS (Note 2).................................................................................................0 to +14V
Voltage on all other pins with respect to VSS .................................................................................. -0.6V to (VDD + 0.6V)
Total power dissipation (Note 1)...........................................................................................................................800 mW
Maximum current out of VSS pin ...........................................................................................................................150 mA
Maximum current into VDD pin ..............................................................................................................................100 mA
Input clamp current, IIK (VI < 0 or VI > VDD) .....................................................................................................................± 20 mA
Output clamp current, IOK (V0 < 0 or V0 >VDD) ...............................................................................................................± 20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................20 mA
Maximum current sunk by PORTA ..........................................................................................................................80 mA
Maximum current sourced by PORTA .....................................................................................................................50 mA
Maximum current sunk by PORTB........................................................................................................................150 mA
Maximum current sourced by PORTB...................................................................................................................100 mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100Ω should be used when applying a “low” level to the MCLR pin rather than
pulling this pin directly to VSS.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 11-1: CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS
AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)
OSC
PIC16C84-04
PIC16C84-10
PIC16LC84-04
RC VDD: 4.0V to 6.0V
VDD: 4.5V to 5.5V
VDD: 2.0V to 6.0V
IDD: 4.5 mA max. at 5.5V
IDD: 1.8 mA typ. at 5.5V
IDD: 4.5 mA typ. at 5.5V
IPD: 100 µA max. at 4.0V WDT dis IPD: 40.0 µA typ. at 4.5V WDT dis IPD: 100 µA typ. at 4V WDT dis
Freq: 4.0 MHz max.
Freq: 4.0 MHz max.
Freq: 2.0 MHz max.
XT VDD: 4.0V to 6.0V
VDD: 4.5V to 5.5V
VDD: 2.0V to 6.0V
IDD: 4.5 mA max. at 5.5V
IDD: 1.8 mA typ. at 5.5V
IDD: 4.5 mA typ. at 5.5V
IPD: 100 µA max. at 4.0V WDT dis IPD: 40.0 µA typ. at 4.5V WDT dis IPD: 100 µA typ. at 4V WDT dis
Freq: 4.0 MHz max.
Freq: 4.0 MHz max.
Freq: 2.0 MHz max.
HS VDD: 4.5V to 5.5V
VDD: 4.5V to 5.5V
Do not use in HS mode
IDD: 4.5 mA typ. at 5.5V
IDD: 10 mA max. at 5.5V typ.
IPD: 40.0 µA typ. at 4.5V WDT dis IPD: 40.0 µA typ. at 4.5V WDT dis
Freq: 4.0 MHz max.
Freq: 10 MHz max.
LP VDD: 4.0V to 6.0V
Do not use in LP mode
IDD: 60 µA typ. at 32 kHz, 2.0V
IPD: 26 µA typ. at 2.0V WDT dis
Freq: 200 kHz max.
VDD: 2.0V to 6.0V
IDD: 400 µA max. at 32 kHz, 2.0V
IPD: 100 µA max. at 4.0V WDT dis
Freq: 200 kHz max.
The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX specifications. It is
recommended that the user select the device type that ensures the specifications required.
© 1995 Microchip Technology Inc.
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