PIC18LF1320-I/SOSQTP 查看數據表（PDF） - Microchip Technology

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PIC18LF1320-I/SOSQTP

18/20/28-Pin High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology

Microchip Technology 

PIC18F1220/1320

22.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings(†)

Ambient temperature under bias.............................................................................................................-40°C to +125°C

Storage temperature .............................................................................................................................. -65°C to +150°C

Voltage on any pin with respect to VSS (except VDD, MCLR and RA4) .......................................... -0.3V to (VDD + 0.3V)

Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +5.5V

Voltage on MCLR with respect to VSS (Note 2) ......................................................................................... 0V to +13.25V

Voltage on RA4 with respect to Vss ............................................................................................................... 0V to +8.5V

Total power dissipation (Note 1) ...............................................................................................................................1.0W

Maximum current out of VSS pin ...........................................................................................................................300 mA

Maximum current into VDD pin ..............................................................................................................................250 mA

Input clamp current, IIK (VI < 0 or VI > VDD)...................................................................................................................... ±20 mA

Output clamp current, IOK (VO < 0 or VO > VDD) .............................................................................................................. ±20 mA

Maximum output current sunk by any I/O pin..........................................................................................................25 mA

Maximum output current sourced by any I/O pin ....................................................................................................25 mA

Maximum current sunk by all ports .......................................................................................................................200 mA

Maximum current sourced by all ports ..................................................................................................................200 mA

Note 1: Power dissipation is calculated as follows:

Pdis = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL)

2: Voltage spikes below VSS at the MCLR/VPP pin, inducing currents greater than 80 mA, may cause latch-up.

Thus, a series resistor of 50-100Ω should be used when applying a “low” level to the MCLR/VPP pin, rather

than pulling this pin directly to VSS.

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

© 2007 Microchip Technology Inc.

DS39605F-page 237

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