SST25PF020B-80-4C-QAE(2012) 查看數據表（PDF） - Microchip Technology

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SST25PF020B-80-4C-QAE
(Rev.:2012)

2 Mbit 2.3-3.6V SPI Serial Flash

Microchip Technology 

SST25PF020B

5.1 Power-Up Specifications

All functionalities and DC specifications are specified

for a VDD ramp rate of greater than 1V per 100 ms (0V

- 3.0V in less than 300 ms). See Table 5-8 and Figure

5-4 for more information.

TABLE 5-8:

Symbol

TPU-READ1

TPU-WRITE1

RECOMMENDED SYSTEM POWER-UP TIMINGS

Parameter

VDD Min to Read Operation

VDD Min to Write Operation

Minimum

100

100

Units

µs

µs

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

VDD

VDD Max

Chip selection is not allowed.

Commands may not be accepted or properly

interpreted by the device.

VDD Min

TPU-READ

TPU-WRITE

Device fully accessible

Time

25135 PwrUp.0

FIGURE 5-4:

POWER-UP TIMING DIAGRAM

TABLE 5-9:

Symbol

TPF

TPR

TOFF

VOFF

RECOMMENDED POWER-UP/-DOWN LIMITS

Limits

Parameter

Min

Max

VDD Falling Time

VDD Rising Time

VDD Off Time

VDD Off Level

1

100

0.033

100

100

0.3

Units

ms/V

ms/V

ms

V

Conditions

0V (recommended)

DS25135A-page 24

 2012 Microchip Technology Inc.

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