SST36VF1602C-70-4C-B3KE 查看數據表（PDF） - Silicon Storage Technology

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SST36VF1602C-70-4C-B3KE

16 Mbit (x8/x16) Dual-Bank Flash Memory

Silicon Storage Technology 

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

SIX-BYTE CODE FOR BLOCK-ERASE

TBE

ADDRESSES

555

2AA

555

555

2AA

BAX

CE#

OE#

WE#

TWP

TBY

RY/BY#

DQ15-0

XXAA XX55

XX80

XXAA XX55

XX50

Note:

This device also supports CE# controlled Block-Erase operation. The WE# and CE#

signals are interchageable as long as minimum timings are met. (See Table 14)

BAX = Block Address

X can be VIL or VIH, but no other value.

FIGURE 13: WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM

EOL Data Sheet

TBR

VALID

1249 F10.1

SIX-BYTE CODE FOR SECTOR-ERASE

TSE

ADDRESSES

555

2AA

555

555

2AA

SAX

CE#

OE#

TWP

WE#

TBY

RY/BY#

DQ15-0

XXAA XX55

XX80

XXAA XX55

XX30

Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE#

signals are interchageable as long as minimum timings are met. (See Table 14)

SAX = Sector Address

X can be VIL or VIH, but no other value.

FIGURE 14: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM

©2006 Silicon Storage Technology, Inc.

21

TBR

VALID

1249 F11.1

S71249-07-EOL

02/08

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