ST7MC2N6 查看數據表（PDF） - STMicroelectronics

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ST7MC2N6

8-bit MCU with nested interrupts, Flash, 10-bit ADC, brushless motor control, five timers, SPI, LINSCI™

STMicroelectronics 

ST7MC1xx/ST7MC2xx

12.6 MEMORY CHARACTERISTICS

12.6.1 RAM and Hardware Registers

Symbol

Parameter

VRM Data retention mode 1)

Conditions

Halt mode (or RESET)

Min

Typ

Max

Unit

1.6

V

12.6.2 FLASH Memory

DUAL VOLTAGE HDFLASH MEMORY

Symbol

Parameter

Conditions

Min 2)

Typ

Max 2) Unit

fCPU

VPP

IPP

Operating frequency

Programming voltage 3)

VPP current4) 5)

Read mode

0

Write / Erase mode

1

4.5V ≤VDD ≤5.5V

11.4

Read (VPP=12V)

Write / Erase

8

MHz

8

12.6

V

200

µA

30

mA

tVPP

Internal VPP stabilization time

tRET

Data retention

NRW

TPROG

TERASE

Write erase cycles

Programming or erasing tempera-

ture range

TA=85°C

TA=105°C

TA=125°C

TA=25°C

10

40

15

7

100

-40

25

μs

years

cycles

85

°C

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under RESET) or in hardware registers

(only in Halt mode). Not tested in production.

2. Data based on characterization results, not tested in production.

3. VPP must be applied only during the programming or erasing operation and not permanently for reliability reasons.

4. Data based on simulation results, not tested in production

5. In Write/Erase mode the IDD supply current consumption is the same as in Run mode (section 12.4.1 on page 252)

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