DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ST7MC2N6 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
ST7MC2N6 Datasheet PDF : 309 Pages
First Prev 281 282 283 284 285 286 287 288 289 290 Next Last
ST7MC1xx/ST7MC2xx
10-BIT ADC CHARACTERISTICS (Cont’d)
ADC Accuracy with VDD=5.0V
Symbol
|ET|
|EO|
|EG|
|ED|
|EL|
Parameter
Total unadjusted error 1)
Offset error 1)
Gain Error 1)
Differential linearity error 1)
Integral linearity error 1)
Conditions
VAREF=3.0V to 5.0V, fCPU=8MHz,
fADC=4MHz, RAIN<10kΩ
Typ
Max 2)
4
2.5
4
2
4
2
4.5
2
4.5
Unit
LSB
Notes:
1. ADC Accuracy vs. Negative Injection Current: Injecting negative current may reduce the accuracy of the conversion
being performed on another analog input. The effect of negative injection current on analog pins is specified in Section
12.14.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 12.8 does not affect the ADC
accuracy.
2. Data based on characterization results, monitored in production to guarantee 99.73% within ± max value from -40°C
to 125°C (± 3σ distribution limits).
Figure 161. ADC Accuracy Characteristics
1023
1022
1021
7
6
5
4
3
2
1
Digital Result ADCDR
1LSBIDEAL
=
V-----D-----D----A----------V-----S----S-----A--
1024
(2)
ET
EO
EL
1 LSBIDEAL
0
1234567
VSSA
EG
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
(3)
(1)
ED
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
1021 1022 1023 1024
VAREF
Vin (LSBIDEAL)
Notes:
1. ADC Accuracy vs. Negative Injection Current:
For IINJ-=0.8mA, the typical leakage induced inside the die is 1.6µA and the effect on the ADC accuracy is a loss of 4 LSB
for each 10KΩ increase of the external analog source impedance. This effect on the ADC accuracy has been observed
under worst-case conditions for injection:
- negative injection
- injection to an Input with analog capability, adjacent to the enabled Analog Input
- at 5V VDD supply, and worst case temperature.
2. Data based on characterization results with TA=25°C.
3. Data based on characterization results over the whole temperature range, monitored in production.
284/309

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]