Operation
Figure 9. Power-fail comparator waveform
VCC
VRST
VSW (2.4V)
PFO
PFO follows PFI
STM1404
trec
PFO follows PFI
RST
AI08861a
3.5
Negative-going VCC transients and undershoot
The STM1404 devices are relatively immune to negative-going VCC transients (glitches).
Figure 23 on page 22 was generated using a negative pulse applied to VCC, starting at VRST
+ 0.3 V and ending below the reset threshold by the magnitude indicated (comparator
overdrive). The graph indicates the maximum pulse width a negative VCC transient can have
without causing a reset pulse. As the magnitude of the transient increases (further below the
threshold), the maximum allowable pulse width decreases. Any combination of duration and
overdrive which lies under the curve will NOT generate a reset signal. Typically, a VCC
transient that goes 100 mV below the reset threshold and lasts 40 µs or less will not cause a
reset pulse. A 0.1 µF bypass capacitor mounted as close as possible to the VCC pin
provides additional transient immunity (see Figure 10).
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on VCC that drive it to values below VSS by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS).
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
Figure 10. Supply voltage protection
VCC
VCC
0.1μF
DEVICE
VSS
AI02169
16/36