STM32F050G4T6 查看數據表（PDF） - STMicroelectronics

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STM32F050G4T6

Low- and medium-density advanced ARM™-based 32-bit MCU with up to 32 Kbytes Flash, timers, ADC and comm. interfaces

STMicroelectronics 

STM32F050xx

Electrical characteristics

6.3.4

Table 18. Programmable voltage detector characteristics (continued)

Symbol

Parameter

Conditions Min(1) Typ Max(1) Unit

VPVD5

PVD threshold 5

Rising edge 2.57 2.68 2.79 V

Falling edge 2.47 2.58 2.69 V

VPVD6

PVD threshold 6

Rising edge 2.66 2.78 2.9

V

Falling edge 2.56 2.68 2.8

V

VPVD7

PVD threshold 7

Rising edge 2.76 2.88 3

V

Falling edge 2.66 2.78 2.9

V

VPVDhyst(2) PVD hysteresis

-

100

-

mV

IDD(PVD) PVD current consumption

-

0.15 0.26 µA

1. Data based on characterization results only, not tested in production.

2. Guaranteed by design, not tested in production.

Embedded reference voltage

The parameters given in Table 19 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 15: General operating

conditions.

Table 19. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min Typ Max Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C 1.16 1.2 1.25

–40 °C < TA < +85 °C 1.16 1.2 1.24(1)

V

V

ADC sampling time when

TS_vrefint (2) reading the internal

reference voltage

- 5.1 17.1(3) µs

ΔVREFINT

Internal reference voltage

spread over the

temperature range

VDDA = 3 V ±10 mV

- - 10(3) mV

TCoeff

Temperature coefficient

- - 100(3) ppm/°C

1. Data based on characterization results, not tested in production.

2. Shortest sampling time can be determined in the application by multiple iterations.

3. Guaranteed by design, not tested in production.

Doc ID 023683 Rev 1

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