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STM32F030R8P6(2013) 查看數據表(PDF) - STMicroelectronics

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STM32F030R8P6 Datasheet PDF : 88 Pages
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Electrical characteristics
STM32F030x4 STM32F030x6 STM32F030x8
Table 36. PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max
fPLL_IN
PLL input clock(1)
PLL input clock duty cycle
1(2)
-
40(2)
-
24(2)
60(2)
MHz
%
fPLL_OUT
tLOCK
JitterPLL
PLL multiplier output clock
PLL lock time
Cycle-to-cycle jitter
16(2)
-
-
-
-
-
48
200(2)
300(2)
MHz
µs
ps
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible
with the range defined by fPLL_OUT.
2. Guaranteed by design, not tested in production.
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 37. Flash memory characteristics
Symbol
Parameter
Conditions
Min
tprog 16-bit programming time TA–40 to +85 °C
-
tERASE Page (1 KB) erase time TA –40 to +85 °C
-
tME Mass erase time
TA –40 to +85 °C
-
Write mode
-
IDD Supply current
Erase mode
-
Vprog Programming voltage
2.4
1. Guaranteed by design, not tested in production.
Typ Max(1) Unit
53.5
-
µs
30
-
ms
30
-
ms
-
10 mA
-
12 mA
-
3.6
V
Symbol
Table 38. Flash memory endurance and data retention
Parameter
Conditions
Min(1)
NEND Endurance
TA = –40 to +85 °C (6 suffix versions)
1
tRET Data retention
1 kcycle(2) at TA = 85 °C
20
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
Unit
kcycles
Years
6.3.11
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
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DocID024849 Rev 1

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