STM32F030RCT6 查看數據表（PDF） - STMicroelectronics
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STM32F030RCT6
STMicroelectronics
STM32F030RCT6 Datasheet PDF : 91 Pages
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Electrical characteristics
STM32F030x4/x6/x8/xC
Table 21. General operating conditions (continued)
Symbol
Parameter
Conditions
Min
Max
Unit
VDDA
Analog operating voltage
VIN
I/O input voltage
Must have a potential equal
to or higher than VDD
2.4
3.6
V
TC and RST I/O
TTa I/O
FT and FTf I/O
-0.3 VDDIOx+0.3
-0.3 VDDA+0.3(2)
V
-0.3
5.5(2)
BOOT0
0
5.5
LQFP64
-
455
PD
Power dissipation at TA = 85 °C LQFP48
for suffix 6 (1)
LQFP32
-
364
mW
-
357
TSSOP20
-
263
TA
Ambient temperature for the
suffix 6 version
Maximum power dissipation -40
Low power dissipation(2)
-40
85
105
°C
TJ
Junction temperature range
Suffix 6 version
-40
105
°C
1. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
2. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.5:
Thermal characteristics).
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 22 are derived from tests performed under the ambient
temperature condition summarized in Table 21.
Table 22. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
tVDD
tVDDA
VDD rise time rate
VDD fall time rate
VDDA rise time rate
VDDA fall time rate
0
∞
-
20
∞
0
∞
-
20
∞
Unit
µs/V
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
Table 23. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
VPOR/PDR(1)
Power on/power down
reset threshold
Falling edge(2)
Rising edge
1.80 1.88 1.96(3) V
1.84(3) 1.92 2.00
V
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