STP3NB90FP 查看數據表（PDF） - STMicroelectronics

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STP3NB90FP

N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET

STMicroelectronics 

STP3NB90 - STP3NB90FP

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tj

Operating Junction Temperature

Tstg

Storage Temperature

(•)Pulse width limited by safe operating area

(1) ISD≤ 3.5A, di/dt≤200 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX

(*)Limited only by maximum temperature allowed

Value

STP3NB90 STP3NB90FP

900

900

±30

3.5

3.5 (*)

2.2

1.26 (*)

14

14 (*)

110

0.87

4.5

30

0.24

-

2000

Unit

V

V

V

A

A

A

W

W/°C

V/ns

V

–55 to 150

°C

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220

1.14

TO-220FP

4.2

62.5

300

°C/W

°C/W

°C

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

Unit

3.5

A

230

mJ

2/10

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