STPS10L40CFP(2003) 查看數據表（PDF） - STMicroelectronics
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STPS10L40CFP Datasheet PDF : 7 Pages
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STPS10L40CT/CG/CF/CFP
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
2x5 A
VRRM
40 V
Tj (max)
150°C
VF (max)
0.46 V
FEATURES AND BENEFITS
s LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
s INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB and D2PAK, these devices are
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
A1
K
A2
K
A2
K
A1
TO-220FPAB
STPS10L40CFP
A2
A1
D2PAK
STPS10L40CG
A2
A1 K
TO-220AB
STPS10L40CT
A2
K
A1
ISOWATT220AB
STPS10L40CF
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
PARM
Tstg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average
forward current
TO-220AB
D2PAK
Tc =135°C Per diode
δ = 0.5
Per device
ISOWATT220AB Tc =115°C Per diode
TO-220FPAB
δ = 0.5
Per device
Surge non repetitive forward current
tp = 10 ms Sinusoidal
Repetitive peak reverse current
tp=2 µs square F=1kHz
Non repetitive peak reverse current
tp = 100 µs square
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
40
20
5
10
5
10
150
1
2
2700
- 65 to + 150
150
10000
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
* : dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 5B
1/7
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