STPS16150CR 查看數據表（PDF） - STMicroelectronics
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STPS16150CR Datasheet PDF : 5 Pages
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STPS16150CT/CG/CR
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
TO-220AB / D2PAK / I2PAK
Per diode
Rth (c)
TO-220AB / D2PAK / I2PAK
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Value
3
1.8
0.6
Unit
°C/W
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
3.0 µA
4.0 mA
VF ** Forward voltage drop
Tj = 25°C
IF = 8 A
0.92 V
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 8 A
IF = 16 A
IF = 16 A
0.70 0.75
1
0.8 0.86
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.014 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
PF(av)(W)
8
7
6
5
4
3
2
1
0
012
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
T
IF(av) (A)
δ=tp/T
tp
3 4 5 6 7 8 9 10
Fig. 3: Normalized avalanche power derating
versus pulse duration.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
IF(av)(A)
9
8
7
6
5
4
3
T
2
1
0 δ=tp/T
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75 100 125 150 175
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
0
Tj(°C)
25
50
75
100
125
150
2/5
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