STPS1L20MF(2006) 查看數據表（PDF） - STMicroelectronics

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STPS1L20MF
(Rev.:2006)

Low drop power Schottky rectifier in flat package

STMicroelectronics 

Characteristics

STPS1L20MF

Figure 7.

Reverse leakage currrent versus

reverse voltage applied (typical

values)

Figure 8.

Reverse leakage currrent versus

junction temperature (typical

values)

IR(mA)

1.E+02

Tj=150°C

1.E+01

Tj=125°C

1.E+00

1.E-01

Tj=100°C

Tj=75°C

Tj=50°C

1.E-02

Tj=25°C

1.E-03

0

2

4

6

VR(V)

8

10 12 14 16

18 20

IR(mA)

1.E+02

VR=20V

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

0

25

Tj(°C)

50

75

100

125

150

Figure 9.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 10. Forward voltage drop versus

forward current

C(pF)

1000

100

10

1

VR(V)

10

F=1MHz

VOSC=30mVRMS

Tj=25°C

100

IFM(A)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.00 0.05

VFM(V)

0.10 0.15

Tj=85°C

(maximum values)

Tj=85°C

(typical values)

0.20 0.25 0.30 0.35

Tj=25°C

(maximum values)

0.40 0.45 0.50

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, Cu=35 µm, typical values)

Rth(j-a)(°C/W)

250

200

150

100

50

S(mm²)

0

0

20

40

60

80 100 120 140 160 180 200

4/7

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