STPS2045C-Y 查看數據表（PDF） - STMicroelectronics
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STPS2045C-Y Datasheet PDF : 7 Pages
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Characteristics
STPS2045C-Y
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8.
IR(µA)
5E+4
1E+4
1E+3
1E+2
1E+1
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
C(pF)
1000
500
200
1E+0
1E-1
0
VR(V)
5
10
15
20
25
30
35
40
45
100
1
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
2
5
10
20
50
Figure 9.
Forward voltage drop versus
forward current
(maximum values, per diode)
IFM(A)
100.0
Tj=125°C
(typical values)
10.0
Tj=125°C
Tj=25°C
1.0
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
80
70
60
(Epoxy printed circuit board,
copper thickness: 35 µm)
50
40
30
20
10
0
1.6
0
S(cm²)
5
10
15
20
25
30
35
40
4/7
Doc ID 17262 Rev 1
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