STPS40L45CT 查看數據表（PDF） - STMicroelectronics

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STPS40L45CT

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS40L45CT/CW

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

PARM(tp)

PARM(1µs)

1

0.1

0.01

0.001

0.01

0.1

tp(µs)

1

10

PARM(tp)

PARM(25°C)

1.2

1

0.8

0.6

0.4

0.2

0

100

1000

0

Tj(°C)

25

50

75

100

125

150

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

IM(A)

250

225

200

175

150

125

100

75

50 IM

25

t

δ=0.5

0

1E-3

1E-2

t(s)

1E-1

Tc=25°C

Tc=75°C

Tc=125°C

1E+0

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6 δ = 0.5

0.4 δ = 0.2

δ = 0.1

0.2

Single pulse

0.0

1E-4

1E-3

tp(s)

1E-2

T

δ=tp/T

1E-1

tp

1E+0

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

IR(mA)

1E+3

1E+2

1E+1

1E+0

Tj=150°C

Tj=125°C

Tj=75°C

1E-1

1E-2

0

Tj=25°C

VR(V)

5 10 15 20 25 30 35 40 45

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

C(nF)

10.0

F=1MHz

Tj=25°C

1.0

0.1

1

VR(V)

10

100

3/6

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