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TPDV1025RG 查看數據表(PDF) - STMicroelectronics

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TPDV1025RG
ST-Microelectronics
STMicroelectronics 
TPDV1025RG Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Features
On-state current (IT(RMS)): 25 A
Max. blocking voltage (VDRM/VRRM): 1200 V
Gate current (IGT): 150 mA
Commutation @ 10 V/µs: up to 88 A/ms
Noise immunity: 2 kV/µs
Insulated package:
– 2,500 V rms (UL recognized: E81734).
Description
The TPDVxx25 series use high performance
alternistor technology.
Featuring very high commutation levels and high
surge current capability, these devices are well
adapted to power control for inductive and
resistive loads (motor, transformer...) especially
on three-phase power grid. Targeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).
Table 1. Device summary
Parameter
TPDV825RG
Blocking voltage VDRM/VRRM
On-state current IT(RMS)
Gate current IGT
800 V
TPDVxx25
25 A high voltage Triacs
A2
G
A1
A1
A2
G
TOP3 insulated
TPDV1025RG
1000 V
25 A
150 mA
TPDV1225RG
1200 V
January 2012
Doc ID 18268 Rev 2
1/7
www.st.com
7

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