X00619MA2AL2 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

X00619MA2AL2

0.8 A sensitive gate SCR

STMicroelectronics 

Characteristics

X00619

Figure 5.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

Figure 6.

Relative variation of gate trigger,

holding and latching current versus

junction temperature

1.00 Zth(j-a)/Rth(j-a)

TO-92

SCU= 0.5 cm²

IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]

1.6

1.4

1.2

1.0

Typical values

0.10

0.8

SOT-223

SCU= 5 cm²

0.6

IH and IL

0.4

IGT

tp(s)

0.2

Tj(°C)

0.01

0.0

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

-40

-20

0

20

40

60

80

100 120

Figure 7.

Relative variation of holding

current versus gate-cathode

resistance (typical values)

Figure 8.

Relative variation of dV/dt immunity

versus gate-cathode resistance

(typical values)

IH[RGK] / IH[RGK=1kΩ]

3.5

3.0

100.0 dV/dt[RGK] / dV/dt[RGK=1kΩ]

VD= 0.67xVDRM

2.5

10.0

2.0

1.5

1.0

1.0

0.5

0.0

1.E-02

RGK(kΩ)

1.E-01

1.E+00

1.E+01

1.E+02

0.1

1.0E-01

RGK(kΩ)

1.0E+00

1.0E+01

Figure 9.

Relative variation of dV/dt immunity Figure 10. Surge peak on-state current versus

versus gate-cathode capacitance

number of cycles

(typical values)

dV/dt[CGK] / dV/dt[RGK=1kΩ]

100

VD= 0.67xVDRM

Rgk = 1 kΩ

ITSM(A)

10

9

8

7

Non repetitive

Tj initial=25 °C

tp=10ms

One cycle

6

10

5

4

Repetitive

Tl= 25 °C

3

2

CGK(nF)

1

Number of cycles

1

0

1

10

1

10

100

1000

4/10

Doc ID 15755 Rev 2

Share Link: