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DSM2190F4 查看數據表(PDF) - STMicroelectronics

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DSM2190F4 Datasheet PDF : 61 Pages
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DSM2190F4
Table 33. Flash Memory Program, Write and Erase Times
Symbol
Parameter
Min.
Typ.
Flash Bulk Erase1 (pre-programmed)
3
Flash Bulk Erase (not pre-programmed)
5
tWHQV3
Sector Erase (pre-programmed)
1
tWHQV2
Sector Erase (not pre-programmed)
2.2
tWHQV1
Byte Program
14
Program / Erase Cycles (per Sector)
100,000
tWHWLO
Sector Erase Time-Out
100
tQ7VQV
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)2
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
Max.
30
30
1200
30
Unit
s
s
s
s
µs
cycles
µs
ns
Table 34. Reset (Reset) Timing
Symbol
Parameter
Conditions
Min
tNLNH
RESET Active Low Time 1
300
tNLNH–PO
Power On Reset Active Low Time
1
tOPR
RESET High to Operational Device
Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.
2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in Read mode.
Figure 36. Reset (RESET) Timing
Max
Unit
ns
ms
300
ns
VCC
RESET
VCC(min)
tNLNH-PO
Power-On Reset
tOPR
tNLNH
tNLNH-A
Warm Reset
tOPR
AI02866b
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