SST3904(2016) 查看數據表（PDF） - ROHM Semiconductor

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SST3904
(Rev.:2016)

NPN General Purpose Transistor

ROHM Semiconductor 

Transistors

UMT3904 / SST3904 / MMST3904 / 2N3904

100

100MHz 200MHz 400MHz 500MHz

Ta=25°C

300 MHz

10

1.0

300MHz

0.1

0.1

200MHz

100MHz

1.0

10

100

COLLECTOR CURRENT : IC (mA)

Fig.13 Gain bandwidth product

1000

Ta=25°C

100

VCE=5V

VCE=5V

f=270Hz

hoe

10

100

10

1.0

10

100

COLLECTOR CURRENT : IC (mA)

Fig.14 Gain bandwidth product

vs. collector current

hie

hre

1

0.1

0.1

hfe

Ta=25°C

IC=1mA

hie=3.84kΩ

hfe=141

hre=5.03

×

10−5

hoe=5.58µS

1

10

100

COLLECTOR CURRENT : IC (mA)

Fig.15 h parameter vs. collector current

10µ VCB=25V

1µ

100n

10n

1n

100k

10k

1k

Ta=25°C

VCE=5V

f=10kHz

100k

1.0d3BdB5dB

10k

3.0dNBF=1.0dB

1k

3.0dNBF=1.0dB

Ta=25°C

VCE=5V

f=1kHz

0.1n

0 25 50 75 100 125 150

ANBIENT TEMPERATURE : Ta (°C)

Fig.16 Noise characteristics ( Ι )

100

0.01

0.1

1

10

COLLECTOR CURRENT : IC (mA)

Fig.17 Noise characteristics ( ΙΙ )

100

0.01

0.1

1

10

COLLECTOR CURRENT : IC (mA)

Fig.18 Noise characteristics ( ΙΙΙ )

100k

Ta=25°C

12

VCE=5V

f=10Hz

10

10k

8

6

1k

N5F.0=d3B.0dB

4

2

100

0

0.01

0.1

1

10

10

COLLECTOR CURRENT : IC (mA)

Fig.19 Noise characteristics ( ΙV )

Ta=25°C

VCE=5V

IC=100µA

RS=10kΩ

100

1k

10k

FREQUENCY : f (Hz)

100k

Fig.20 Noise vs. collector current

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