LCDP1511D 查看數據表（PDF） - STMicroelectronics
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LCDP1511D Datasheet PDF : 6 Pages
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PARAMETERS RELATED TO THE DIODE LINE / GND (Tamb = 25°C)
Symbol
VF
VFP
(note 1)
Test conditions
Square pulse : tp = 500µs IF = 1A
10/700µs
1.2/50µs
2/10µs
1kV
1.5kV
2.5kV
RP = 60Ω
RP = 60Ω
RP = 245Ω
IPP = 10A
IPP = 15A
IPP = 10A
note 1 : see test circuit for VFP, RP is the protection resistor located on the line card
PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C)
Symbol
IGT
IH
VGT
IRG
VDGL
Test conditions
VGND / LINE = -48V
VGATE = -48V (see note 2)
at IGT
VRG = -75V
VGATE = -48V (see note 3)
10/700µs
1.2/50µs
2/10µs
1kV
1.5kV
2.5kV
RP = 60Ω
RP = 60Ω
RP =245Ω
IPP = 10A
IPP = 15A
IPP = 10A
Min
150
note 2 : see functional holding current test circuit
note 3 : See test circuit for VDGL
The oscillations with a time duration lower than 50ns are not taken into account
PARAMETERS RELATED TO LINE / GND (Tamb = 25°C)
Symbol
IRM
C
Test conditions
VGATE / LINE = -1V VRM = -75V
VR = -3V F = 1MHz
VR = -48V F = 1MHz
LCDP1511D
Max
Unit
2
V
5
V
10
20
Max
Unit
5
mA
mA
2.5
V
5
µA
7
V
15
20
Max
Unit
5
µA
200
pF
100
Fig. 1: Surge peakcurrent versus overloadduration. Fig. 2: Relative variation of holding current versus
junction temperature.
ITSM(A)
7
6
5
4
3
2
1
0
0.01
0.10
t(s)
1.00
10.00
F=50Hz
Tj initial=25°C
100.00
1000.00
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20
Tj(°C)
40 60
80 100 120
3/6
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