C8051F330-GP 查看數據表（PDF） - Silicon Laboratories

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C8051F330-GP

Mixed Signal ISP Flash MCU Family

Silicon Laboratories 

C8051F330/1/2/3/4/5

11.1.3. Flash Write Procedure

Flash bytes are programmed by software with the following sequence:

Step 1. Disable interrupts (recommended).

Step 2. Erase the 512-byte Flash page containing the target location, as described in Section

11.1.2.

Step 3. Set the PSWE bit (register PSCTL).

Step 4. Clear the PSEE bit (register PSCTL).

Step 5. Write the first key code to FLKEY: 0xA5.

Step 6. Write the second key code to FLKEY: 0xF1.

Step 7. Using the MOVX instruction, write a single data byte to the desired location within the 512-

byte sector.

Step 8. Clear the PSWE bit.

Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be

cleared so that MOVX instructions do not target program memory.

Table 11.1. Flash Electrical Characteristics

VDD = 2.7 to 3.6 V; –40 to +85 ºC unless otherwise specified.

Parameter

Conditions

Min

Typ

Max

C8051F330/1

8192*

—

—

Units

Flash Size

C8051F332/3

4096

—

—

bytes

Endurance

Erase Cycle Time

Write Cycle Time

C8051F334/5

25 MHz System Clock

25 MHz System Clock

2048

—

—

20 k 100 k

—

Erase/Write

10

15

20

ms

40

55

70

µs

*Note: 512 bytes at addresses 0x1E00 to 0x1FFF are reserved.

11.2. Non-volatile Data Storage

The Flash memory can be used for non-volatile data storage as well as program code. This allows data

such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX

write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.

106

Rev. 1.5

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