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C8051F330-GP 查看數據表(PDF) - Silicon Laboratories

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C8051F330-GP
Silabs
Silicon Laboratories 
C8051F330-GP Datasheet PDF : 216 Pages
First Prev 121 122 123 124 125 126 127 128 129 130 Next Last
C8051F330/1/2/3/4/5
Table 13.1. Internal Oscillator Electrical Characteristics
VDD = 2.7 to 3.6 V; TA = –40 to +85 °C unless otherwise specified
Parameter
Conditions
Min
Typ
Max
Internal High-Frequency Oscillator (Using Factory-Calibrated Settings)
Oscillator Frequency
IFCN = 11b
24
24.5
25
Oscillator Supply Current
(from VDD)
25 °C, VDD = 3.0 V,
OSCICN.7 = 1
450
Power Supply Sensitivity
Constant Temperature
0.3 ±
0.1*
Units
MHz
µA
%/V
Temperature Sensitivity
Constant Supply
— 50 ± 10* — ppm / °C
Internal Low-Frequency Oscillator (Using Factory-Calibrated Settings)
Oscillator Frequency
Oscillator Supply Current
(from VDD)
OSCLD = 11b
25 °C, VDD = 3.0 V,
OSCLCN.7 = 1
72
80
88
kHz
5.5
µA
Power Supply Sensitivity
Constant Temperature
— –3 ± 0.1* —
%/V
Temperature Sensitivity
Constant Supply
20 ± 8*
— ppm/°C
*Note: Represents mean ±1 standard deviation.
124
Rev. 1.5

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