STPS8H100FP(2006) 查看數據表（PDF） - STMicroelectronics
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STPS8H100FP Datasheet PDF : 9 Pages
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STPS8H100
Characteristics
Figure 3.
Normalized avalanche power
derating versus junction
temperature
Figure 4.
Average forward current versus
ambient temperature, δ = 0.5,
(TO-220AC, D2PAK)
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
6
Tj(°C)
75
100
125
150
4
T
2
Rth(j-a)=15°C/W
δ=tp/T
tp
Tamb(°C)
0
0 20 40 60 80 100 120 140 160 180
Figure 5.
Average forward current versus
ambient temperature, δ = 0.5,
(TO-220FPAC)
Figure 6.
Non repetitive surge peak
forward current versus overload
duration - maximum values, per
diode (TO-220AC, D2PAK)
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
6
4
T
2
δ=tp/T
tp
0
0 20 40
Rth(j-a)=50°C/W
Tamb(°C)
60 80 100 120 140 160 180
IM(A)
160
140
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
Tc=75°C
Tc=100°C
t(s)
1E-2
1E-1
Tc=125°C
1E+0
Figure 7.
Non repetitive surge peak forward Figure 8.
current versus overload duration
- maximum values (TO-220FPAC)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AC, D2PAK)
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
Tc=75°C
Tc=100°C
t(s)
1E-2
1E-1
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
3/9
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