STP140NF75 查看數據表（PDF） - STMicroelectronics

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STP140NF75

N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET

STMicroelectronics 

STB140NF75 - STP140NF75-1 - STP140NF75

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 120A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 120A,

di/dt = 100A/µs,

VDD = 35V, Tj = 150°C

(see Figure 21)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

120 A

480 A

1.5 V

115

ns

450

nC

8

A

5/18

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