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STM32F217REH6V 查看數據表(PDF) - STMicroelectronics

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STM32F217REH6V Datasheet PDF : 173 Pages
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STM32F21xxx
Electrical characteristics
Figure 69. NAND controller waveforms for common memory read access
FSMC_NCEx
ALE (FSMC_A17)
CLE (FSMC_A16)
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
td(ALE-NOE)
th(NOE-ALE)
tw(NOE)
tsu(D-NOE)
th(NOE-D)
ai14912c
Figure 70. NAND controller waveforms for common memory write access
FSMC_NCEx
ALE (FSMC_A17)
CLE (FSMC_A16)
td(ALE-NOE)
FSMC_NWE
tw(NWE)
th(NOE-ALE)
FSMC_NOE
FSMC_D[15:0]
td(D-NWE)
tv(NWE-D)
th(NWE-D)
ai14913c
Table 79. Switching characteristics for NAND Flash read cycles(1)(2)
Symbol
Parameter
Min
Max
tw(N0E)
tsu(D-NOE)
FSMC_NOE low width
FSMC_D[15-0] valid data before FSMC_NOE
high
4THCLK- 1
9
th(NOE-D)
td(ALE-NOE)
th(NOE-ALE)
FSMC_D[15-0] valid data after FSMC_NOE high
FSMC_ALE valid before FSMC_NOE low
FSMC_NWE high to FSMC_ALE invalid
3
-
3THCLK+ 2
1. CL = 30 pF.
2. Based on characterization, not tested in production.
4THCLK+ 2
-
-
3THCLK
-
Unit
ns
ns
ns
ns
ns
Doc ID 17050 Rev 8
139/173

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