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STM32F217RGH6 查看數據表(PDF) - STMicroelectronics

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STM32F217RGH6 Datasheet PDF : 173 Pages
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Electrical characteristics
STM32F21xxx
5.3.26
Table 80. Switching characteristics for NAND Flash write cycles(1)(2)
Symbol
Parameter
Min
Max
tw(NWE) FSMC_NWE low width
tv(NWE-D) FSMC_NWE low to FSMC_D[15-0] valid
th(NWE-D) FSMC_NWE high to FSMC_D[15-0] invalid
td(D-NWE) FSMC_D[15-0] valid before FSMC_NWE high
td(ALE-NWE) FSMC_ALE valid before FSMC_NWE low
th(NWE-ALE) FSMC_NWE high to FSMC_ALE invalid
1. CL = 30 pF.
2. Based on characterization, not tested in production.
4THCLK- 1
-
3THCLK
5THCLK
-
3THCLK- 2
4THCLK+ 3
0
-
-
3THCLK+ 2
-
Unit
ns
ns
ns
ns
ns
ns
Camera interface (DCMI) timing specifications
Table 81. DCMI characteristics
Symbol
Parameter
Frequency ratio
DCMI_PIXCLK/fHCLK
Conditions
Min
Max
DCMI_PIXCLK= 48 MHz
0.4
5.3.27
SD/SDIO MMC card host interface (SDIO) characteristics
Unless otherwise specified, the parameters given in Table 82 are derived from tests
performed under ambient temperature, fPCLKx frequency and VDD supply voltage conditions
summarized in Table 11.
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (D[7:0], CMD, CK).
Figure 71. SDIO high-speed mode
tf
tr
140/173
tW(CKH)
CK
D, CMD
(output)
D, CMD
(input)
tC
tOV
tW(CKL)
tOH
tISU
tIH
Doc ID 17050 Rev 8
ai14887

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