STM32F217ZGT6TR 查看數據表（PDF） - STMicroelectronics

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STM32F217ZGT6TR

ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

STMicroelectronics 

STM32F21xxx

Revision history

Table 92. Document revision history (continued)

Date

Revision

Changes

22-Apr-2011

Updated Typical and maximum current consumption conditions, as

well as Table 17: Typical and maximum current consumption in Run

mode, code with data processing running from Flash memory (ART

accelerator disabled) and Table 18: Typical and maximum current

consumption in Run mode, code with data processing running from

Flash memory (ART accelerator enabled) or RAM. Added Figure 20,

Figure 21, Figure 22, and Figure 23.

Updated Table 19: Typical and maximum current consumption in Sleep

mode, and added Figure 24 and Figure 25.

Updated Table 21: Typical and maximum current consumptions in

Standby mode and Table 22: Typical and maximum current

consumptions in VBAT mode.

Updated Table 20: Typical and maximum current consumptions in Stop

mode. Added Figure 26: Typical current consumption vs temperature

in Stop mode.

Updated Table 21: Typical and maximum current consumptions in

Standby mode and Table 22: Typical and maximum current

consumptions in VBAT mode.

Updated On-chip peripheral current consumption conditions and

Table 23: Peripheral current consumption.

Updated tWUSTDBY and tWUSTOP, and added Note 3 in Table 24: Low-

power mode wakeup timings.

Maximum fHSE_ext and minimum tw(HSE) values updated in Table 25:

High-speed external user clock characteristics.

4

Updated C and gm in Table 27: HSE 4-26 MHz oscillator

(continued) characteristics. Updated RF, I2, gm, and tsu(LSE) in Table 28: LSE

oscillator characteristics (fLSE = 32.768 kHz).

Added Note 3 and updated ACCHSI, IDD(HSI) and tsu(HSI) in Table 29:

HSI oscillator characteristics. Added Figure 31: ACCHSI versus

temperature

Updated fLSI, tsu(LSI) and IDD(LSI) in Table 30: LSI oscillator

characteristics.

Table 31: Main PLL characteristics: removed note 1, updated tLOCK,

jitter, IDD(PLL) and IDDA(PLL), added Note 2 for fPLL_IN minimum and

maximum values.

Table 32: PLLI2S (audio PLL) characteristics: removed note 1, updated

tLOCK, jitter, IDD(PLLI2S) and IDDA(PLLI2S), added Note 2 for fPLLI2S_IN

minimum and maximum values.

Added Note 1 in Table 33: SSCG parameters constraint.

Updated Table 34: Flash memory characteristics. Modified Table 35:

Flash memory programming and added Note 1 for tprog. Updated tprog

and added Note 1 in Table 36: Flash memory programming with VPP.

Modified Figure 36: Recommended NRST pin protection.

Updated Table 39: EMI characteristics and EMI monitoring conditions

in Section : Electromagnetic Interference (EMI).

Added Note 2 related to VESD(HBM)in Table 40: ESD absolute

maximum ratings.

Added Section 5.3.15: I/O current injection characteristics.

Updated Table 43: I/O static characteristics. Modified maximum

frequency values and conditions in Table 45: I/O AC characteristics.

Doc ID 17050 Rev 8

165/173

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